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CED1710/CEU1710
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 17A, RDS(ON) = 85m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D PRELIMINARY
G
D G S CEU SERIES TO-252(D-PAK)
G D
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100
Units V V A A W W/ C C
20
17 68 50 0.4 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA Limit 2.5 50 Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice . 1
2005.May http://www.cetsemi.com
CED1710/CEU1710
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 15A VDS = 80V, ID = 19A, VGS = 10V VDD = 50V, ID = 19A, VGS = 10V, RGEN = 25 17 51 16 71 26 3.3 16.2 15 1.5 34 100 32 140 34 ns ns ns ns nC nC nC A V
c
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250A VDS = 100, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250A VGS = 10V, ID = 15A VDS = 2.5V, ID = 15A 2 65 11 702 200 88 Min 100 1 100 -100 4 85 Typ Max Units V
A
4
nA nA V m S pF pF pF
VDS = 25V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
2
CED1710/CEU1710
6 VGS=10,8,6V 5 4 3 2 1 50 25 C
ID, Drain Current (A)
ID, Drain Current (A)
40
30
VGS=5V
20 TJ=125 C -55 C
10
VGS=4V
0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 1 2 3 4 5 6 7
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1200 1000 800 600 400 Coss 200 0 0 5 10 15 20 25 Crss Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=15A VGS=10V
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
VGS=0V
2
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=250A
IS, Source-drain current (A)
25 50 75 100 125 150
10
10
1
10 -25 0
0
0.2
0.6
1.0
1.4
1.8
2.2
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CED1710/CEU1710
VGS, Gate to Source Voltage (V)
10 VDS=80V ID=19A 10
2
RDS(ON)Limit
ID, Drain Current (A)
8
4
100s 1ms 10ms DC
10
1
6
4
10
0
2
0 0 5 10 15 20 25 30
10
-1
TC=25 C TJ=150 C Single Pulse 10
-1
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1 0.05 0.02 0.01 Single Pulse
PDM t1 t2 1. RcJC (t)=r (t) * RcJC 2. RcJC=See Datasheet 3. TJM-TC = P* RcJC (t) 4. Duty Cycle, D=t1/t2
10
-2
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve
4

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